MOCVD

The Metal Organic Chemical Vapor Deposition is used for a broad variety of applications in industry and research. In our project we use the MOCVD method for the deposition of metal/silicon multilayers. The demands regarding the layer thicknesses (few nanometers) as well as the boundary surface roughness (a few angstroms) represent a challenge to the MOCVD method.

Principle of a MOCVD process: (1) feed of the molecules in the gasphase to the substrate, (2) supply of energy (thermal, plasma, light) to the dismantling of the molecules, (3) deposition of the material, evacuation of the molecule fragments in the gasphase

In our project we use metal-organic compounds ("precursor"), in order to ensure a simple handling. In a co-operation with the group of Professor Jutzi (inorganic chemistry) precursors developed specifically for this purpose are used. The separations are executed in a high vacuum chamber with in-situ soft X-ray reflectivity measurements as a check of layer thickness and morphology. The dismantling of the precursor is done by heating the substrate, or by use of a plasma. The lower pictures show transmission electron microscopy cross section images of a molybdenumoxide/silicon oxide multilayer with 24 periods and a period thickness of approximately 8 nm. This oxidic multilayer was manufactured by use of an oxygen plasma and is characterised by a very small boundary surface roughness (about 0,2 nm).

Further work in this area is planned in the near future. Several interesting theses (diplomas) are to be assigned about MOCVD.
Contakt: Dr. Frank Hamelmann / hamelman@physik.uni-bielefeld.de

Publications:

W/Si Multilayers Deposited by Hot-Filament MOCVD; F. Hamelmann, S.H.A. Petri, A. Klipp, G. Haindl, J. Hartwich, L. Dreeskornfeld, U. Kleineberg, P. Jutzi, U. Heinzmann; Thin Solid Films 338 , 70-74 (1999)

Metal/Silicon Multilayers Produced by Low-Temperature MOCVD; F. Hamelmann, G. Haindl, J. Hartwich, A. Klipp, E. Majkova, U. Kleineberg, P. Jutzi, U. Heinzmann; Mater. Res. Soc. Proc. 555 , 19-24 (1999)

Metal Oxide / Silicon Oxide Multilayer with Smooth Interfaces Produced by in-situ Controlled Plasma-Enhanced MOCVD; F. Hamelmann, G. Haindl, J. Schmalhorst, A. Aschentrup, E. Majkova, U. Kleineberg, U. Heinzmann, A. Klipp, P. Jutzi, A. Anopchenko, M. Jergel, S. Luby; Thin Solid Films 358 , 90-93 (2000)

Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films; A. Klipp, F. Hamelmann, G. Haindl, J. Hartwich, U. Kleineberg, P. Jutzi, U. Heinzmann; Chem. Vap. Deposition 2000, 6, No. 2, 63-66

Plasma-Enhanced MOCVD of Smooth Nanometersized Metal/Silicon Single- and Multilayerfilms; F. Hamelmann, G. Haindl, A. Aschentrup, A. Klipp, U. Kleineberg, P. Jutzi, U. Heinzmann; ECS Proceedings 2000-13 (in press)

See also:   

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